| PART |
Description |
Maker |
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| CY7C1049CV33 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL® 32-Mbit (2M x 16) Static RAM
MoBL® 16-Mbit (1M x 16) Static RAM
＂SHIELDING BAG 16 X 18＂＂ Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”，“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
| CY7C1049D-10VXI CY7C1049D11 |
4-Mbit (512 K × 8) Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
| CY62157DV3006 CY62157DV30L-55BVXE CY62157DV30L-55B |
8-Mbit (512K x 16) MoBL㈢ Static RAM
8-Mbit (512K x 16) MoBL? Static RAM
8-Mbit (512K x 16) MoBL垄莽 Static RAM
8-Mbit (512K x 16) MoBL Static RAM
|
Cypress Semiconductor
|
| SST4117A SST4118A |
1-Mb (128K x 8) Static RAM
1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我（直）| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
| AM41DL6408G25IS AM41DL6408G25IT AM41DL6408G45IS AM |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4x 16位）.0伏的CMOS只，同时作业闪存兆位 M中的x 8-Bit/512x 16位），静态存储器
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4米x 16位）.0伏的CMOS只，同时作业闪存兆位 M中的x 8-Bit/512亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| AM41DL3248GT45IS M41000002S M41000002L |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512亩x 16位），静态存储器
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 32兆位个M × 8 2x 16位）.0伏的CMOS只，同步写闪存和8兆位 M中的x 8-Bit/512x 16位），静态存储器
|
Samsung Semiconductor Co., Ltd.
Advanced Micro Devices, Inc.
|
| CY62147DV30L-55BVXE CY62147DV30LL-45BVXI CY62147DV |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
4-Mbit (256K x 16) Static RAM 4兆位56K × 16）静态RAM
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
SPANSION
|
